岗位职责
- Define transistor architecture and design building blocks for new technology nodes;
- Optimize yield and device performance using analytical skills to enhance SRAM/device outcomes and ensure excellent yield;
- Design and implement test structures to assess device performance and identify process weaknesses;
- Communicate effectively and collaborate within cross-functional teams;
- Integrate devices across various process modules, including creating test keys, executing tape-outs, performing meticulous device analysis, conducting advanced simulations, and ensuring model integrity.
职位要求
- Ph.D. in Electronics/Electrical Engineering, Solid State Physics, or a related field from a top-100 QS-ranked university/institution;
- Strong technical knowledge of device physics, enabling the analysis of parametric data and a firm grasp of integration and yield challenges for key modules and critical device parameters;
- Proficient in Statistical Process Control (SPC) and/or Design of Experiments (DOE) principles;
- Experience in integration, SRAM, device measurement (IV/CV), cell design, layout, and simulation (e.g., TCAD/HSPICE) is beneficial but not essential;
- Excellent communication and teamwork skills, with fluency in English;
- Skills in AI and programming are preferred (e.g. SQL, python, etc.).
